Opto Diode introduces the first of a family of three new infrared (IR) emitters. The OD-850W gallium aluminum arsenide (GaAlAs) LED features a wide-emission angle for coverage over a large area and extremely high optical output (minimum 30, typical 40mW) with peak emission wavelength at 850nm. The new device is an upgrade and replacement for Opto Diode’s OD-880W IRLEDs, offering nearly double the output power, added stability, and much less degradation. Additionally, the 850nm wavelength is more closely matched to the peak response of photo transistors and opto integrated circuits (ICs), making them ideal for industrial control applications such as photoelectric controls and optical encoders.