CrayoNano AS, in cooperation with the Norwegian University of Science and Technology (NTNU), has introduced GaAs nanowires grown on graphene, a patented hybrid material with competitive properties.
The patented method of growing semiconductor nanowires on atomically thin graphene uses MBE (Molecular Beam Epitaxy) to grow the nanowires and offers excellent optoelectronic properties as well as cost efficiency, transparency and flexibility. Companies like IBM and Samsung have been showing interest in this development as a possible replacement for silicon in electronics.
CrayoNano AS hopes that semiconductors grown on graphene will become the basis for new types of device systems and take over as the preferred substrate for many applications in the semiconductor industry.