New 8 V p-channel TrenchFET® power MOSFET has the lowest on-resistance achieved for a p-channel device in the thermally enhanced PowerPAK® SC-70 2 mm by 2 mm footprint area (16 mΩ at 4.5 V, 26 mΩ at 1.8 V, 32 mΩ at 1.5 V, and 95 mΩ at 1.2 V). The ultra-small PowerPAK SC-70 package of the SiA427DJ is optimized for small handheld electronics. The new device will be used for load … [Read more...]
Cooling Options And Challenges Of High Power Semiconductor Modules
Introduction Trends in power electronics systems and devices over the last decade have placed increasing demands on the efficiencies of the thermal management systems used for power Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) and Insulated Gate Bipolar Transistor (IGBT) modules. The pressure to decrease the size of power electronics systems and, subsequently, the … [Read more...]
