Pentair Technical Products announces a fully featured, expanded line of Hoffman™ brand ZONEX™ ATEX-Certified* Enclosures. ZONEX hinge-cover and screw-cover enclosures are designed for use in applications where “increased safety” protection (Ex e), as defined by the ATEX Directive 94/9/EC, is acceptable to safely house electrical components in Zone 1 and Zone 2 rated areas. New … [Read more...]
New Graphene Material Conducts Heat Faster than Silicon
A new graphene material capable of conducting heat 20 times faster than silicon could make the next generation of electronic devices quieter and longer-lasting. The experimental graphene made by U.S. and Chinese researchers has also proven 60 percent more effective at transferring heat than typical graphene — a carbon sheet just one atom thick. Efficient heat removal would … [Read more...]
Companies Team Up to Develop Adhesives to Create 3D Semiconductors
3M and IBM plan to jointly develop the first adhesives that can be used to package semiconductors into densely stacked silicon “towers.” The companies are aiming to create a new class of materials, which will make it possible to build commercial microprocessors composed of layers of up to 100 separate chips. Such stacking would allow for dramatically higher levels of … [Read more...]
Side-View LED Manufacturing Wins Two Technology Innovation Awards
Nordson ASYMTEK earned two awards for innovative technology during NEPCON China 2011. Both the VISION Award from SMT China magazine and the Innovation Award from Electronics Manufacturing (EM) Asia magazine were presented to Nordson ASYMTEK for product excellence in the dispensing category for its jet dispenser for side-view LED manufacturing. This was the fifth year in a row … [Read more...]
Hot STM Captures Thermal Decomposition in situ at the Nanoscale
A new report in the journal Nanotechnology offers findings of a nanoscale in situ investigation of ultrathin silicon oxide thermal decomposition by high temperature scanning tunneling microscopy. A surface chemical reaction—the thermal decomposition of ultrathin silicon oxide (~1 nm) by ultrahigh vacuum (UHV) thermal annealing at 600–800 °C—is in situ investigated on a … [Read more...]
